2SD2607
Transistors
Power Transistor (100V, 8A)
2SD2607
!
!
!
!Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SB1668.
!
!
!
!Absolute maximum ratings
(Ta = 25
C)
Parameter
*
Single pulse, Pw = 10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
100
100
7
8
10
*
2
150
-
55~+150
Unit
V
V
V
A (DC)
A (Pulse)
W
30
W (Tc = 25
C)
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
!
!
!
!External dimensions
(Units: mm)
ROHM : TO-220FN
(2) Collector(Drain)
(3) Emitter(Source)
(1) Base(Gate)
0.75
0.8
2.54
(1)
(3)
(2)
(1)
2.54
(3)
(2)
5.0
8.0
14.0
15.0
12.0
1.3
1.2
10.0
3.2
2.6
4.5
2.8
!
!
!
!Packaging specifications and h
FE
Type
2SD2607
TO-220FN
1k~20k
-
500
Package
h
FE
Code
Basic ordering unit (pieces)
!
!
!
!Circuit diagram
R1 5k
R2 300k
B
C
E
: Base
: Collector
: Emitter
B
E
C
R
1
R
2
!
!
!
!Electrical characteristics
(Ta = 25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
100
100
-
-
-
1000
-
-
-
-
-
-
-
-
40
50
-
-
10
3
1.5
20000
-
-
V
V
A
mA
V
-
MHz
*
1
*
1
*
2
pF
I
C
= 50
A
I
C
= 5mA
V
CB
= 100V
V
EB
= 5V
I
C
/I
B
= 3A/6mA
V
CE
/I
C
= 3V/2A
V
CE
= 5V , I
E
=
-
0.2A , f = 10MHz
V
CB
= 10V , I
E
= 0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
*
1 Measured using pulse current.
*
2 Transition frequency of the device.
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